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  rev.2.00, nov.08.200 4, page 1 of 7 bcr5pm-12l triac medium power use rej03g0302-0200 rev.2.00 nov.08.2004 features ? i t (rms) : 5 a ? v drm : 600 v ? i fgti , i rgti , i rgt : 20 ma (10 ma) note5 ? viso : 2000 v ? insulated type ? planar passivation type ul recognized : yellow card no. e223904 file no. e80271 outline 2 1 3 to-220f 2 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal applications switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as tv sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, and solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general controlling device maximum ratings voltage class parameter symbol 12 unit repetitive peak off-state voltage note1 v drm 600 v non-repetitive peak off-state voltage note1 v dsm 720 v
bcr5pm-12l rev.2.00, nov.08.200 4, page 2 of 7 parameter symbol ratings unit conditions rms on-state current i t (rms) 5 a commercial frequency, sine full wave 360 conduction, tc = 95 c surge on-state current i tsm 50 a 60hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 10.4 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 3 w average gate power dissipation p g (av) 0.3 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 2.0 g typical value isolation voltage viso 2000 v ta = 25 c, ac 1 minute, t 1 t 2 g terminal to case notes: 1. gate open. electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 125 c, v drm applied on-state voltage v tm ? ? 1.8 v tc = 25 c, i tm = 7 a, instantaneous measurement v fgt ? ? 1.5 v ? v rgt ? ? 1.5 v gate trigger voltage note2 ?? v rgt ?? ? ? 1.5 v tj = 25 c, v d = 6 v, r l = 6 ? , r g = 330 ? i fgt ? ? 20 note5 ma ? i rgt ? ? 20 note5 ma gate trigger current note2 ?? i rgt ?? ? ? 20 note5 ma tj = 25 c, v d = 6 v, r l = 6 ? , r g = 330 ? gate non-trigger voltage v gd 0.2 ? ? v tj = 125 c, v d = 1/2 v drm thermal resistance r th (j-c) ? ? 4.0 c/w junction to case note3 critical-rate of rise of off-state commutating voltage note4 (dv/dt)c 5 ? ? v/ s tj = 125 c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5c/w. 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. high sensitivity (i gt 10 ma) is also available. (i gt item: 1) test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125 c 2. rate of decay of on-state commutating current (di/dt)c = ? 2.5 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
bcr5pm-12l rev.2.00, nov.08.200 4, page 3 of 7 performance curves maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics (i, ii and iii) gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60hz) transient thermal impedance (c/w) 4.6 4.2 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 2 10 1 10 0 10 ?1 5 7 2 3 5 7 2 3 5 7 2 3 10 0 10 1 10 2 37 25 37 25 100 60 40 0 10 20 30 50 70 90 80 ?60 ?40?20 0 20 40 60 80 100 120 140 10 2 7 5 3 2 7 5 3 2 7 5 3 2 10 1 10 0 10 ?1 23 5710 2 10 1 23 5710 3 23 57 10 4 23 5710 3 23 5 10 2 ?60 ?40?20 0 20 40 60 80 100 120 140 10 3 7 5 3 2 7 5 3 2 10 2 10 1 10 3 7 5 3 2 7 5 3 2 10 2 10 1 23 5710 0 10 ?1 23 5710 1 23 5710 2 0 1.5 1.0 0.5 2.5 2.0 4.0 3.5 3.0 tj = 25c tj = 125c v gm = 10v p gm = 3w i gm = 2a v gt = 1.5v i gt = 20ma v gd = 0.2v p g(av) = 0.3w typical example i rgt i i fgt i i rgt iii typical example
bcr5pm-12l rev.2.00, nov.08.200 4, page 4 of 7 maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance (c/w) conduction time (cycles at 60hz) on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature (c) rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature 0 3 2 1 5 4 9 8 7 6 10 01234 10 6 578 9 10 3 10 ?1 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 23 57 23 57 23 57 23 57 10 4 10 2 10 1 10 5 10 3 0123456 8 7 0 20 40 80 60 100 120 140 160 0 20 40 80 60 100 120 140 160 0123456 8 7 0 20 40 80 60 100 120 140 160 ?60 ?40?20 0 20 40 60 80 100 120 140 10 5 7 5 3 2 7 5 3 2 7 5 3 2 10 4 10 3 10 2 0 0.5 1.0 1.5 2.0 3.0 2.5 no fins curves apply regardless of conduction angle 360 conduction resistive, inductive loads all fins are black painted aluminum and greased curves apply regardless of conduction angle resistive, inductive loads natural convection 120 120 t2.3 100 100 t2.3 60 60 t2.3 typical example natural convection no fins curves apply regardless of conduction angle resistive, inductive loads 360 conduction resistive, inductive loads
bcr5pm-12l rev.2.00, nov.08.200 4, page 5 of 7 holding current vs. junction temperature junction temperature (c) holding current (ma) latching current (ma) latching current vs. junction temperature junction temperature (c) rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width ( s) gate trigger current vs. gate current pulse width ?60 ?40?20 0 20 40 60 80 100 120 140 10 2 7 5 3 2 7 5 3 2 10 1 10 0 10 3 7 5 3 2 7 5 3 2 7 5 3 2 10 2 10 1 10 0 ?60 ?40?20 0 20 40 60 80 100 120 140 10 3 7 5 3 2 7 5 3 2 10 2 10 1 10 0 10 1 10 2 37 25 37 2 5 23 5710 2 10 1 23 5710 3 23 5710 4 0 20 40 80 60 100 120 160 140 2 3 5 7 2 3 5 7 7 10 1 10 0 10 0 10 1 10 2 37 25 37 2 5 ?60 ?40?20 0 20 40 60 80 100 120 140 0 20 40 80 60 100 120 140 160 v d = 12v typical example distribution typical example t 2 + , g + t 2 ? , g ? typical example t 2 + , g ? typical example distribution typical example tj = 125c iii quadrant i quadrant main voltage main current i t (di/dt)c v d time time (dv/dt)c typical example tj = 125c i t = 4a = 500 s v d = 200v f = 3hz typical example i rgt iii i rgt i i fgt i i quadrant iii quadrant minimum characteristics value
bcr5pm-12l rev.2.00, nov.08.200 4, page 6 of 7 test procedure i test procedure iii test procedure ii gate trigger characteristics test circuits 330 ? 330 ? 330 ? 6 ? 6 ? 6v 6v a v a v 6 ? 6v a v
bcr5pm-12l rev.2.00, nov.08.200 4, page 7 of 7 package dimensions to-220f eiaj package code jedec code mass (g) (reference value) lead material ? 2.0 cu alloy conforms symbol dimension in millimeters min typ max a a 1 a 2 b d e e x y 1 y zd ze 10.5 max 1.3 max 5.2 2.54 2.54 2.8 0.5 2.6 0.8 3.2 0.2 8.5 1.2 5.0 17 3.6 4.5 13.5 min note 1) the dimensional figures indicate representative values unless otherwise the tolerance is specified. order code lead form standard packing quantity standard order code standard order code example straight type vinyl sack 100 type name +a bcr5pm-12la lead form plastic magazine (tube) 50 type name +a ? lead forming code BCR5PM-12LA-A8 note : please confirm the specificat ion about the shipping in detail.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is al ways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating i n the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents in formation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or e rrors. please also pay attention to information published by renesas technology corp. by various means, including the renesas technolo gy corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under cir cumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materia ls. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is pro hibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 200 4. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .2.0


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